Nanofabulous Seminar: Single-electron tunneling through dopants in thin-Si devices
Daniel Moraru has been working on the development of a unique research direction for semiconductor nanoscale devices, aiming for atomic- and molecular-scale electronics by utilizing dopant atoms (or dopant clusters as “molecules”) in silicon. Through such research, he and his group have been contributing to the advancement of a field coined as “dopant-based electronics”. In his lab, research is performed from different perspectives, from first-principles simulations of atomistic effects to Si nanodevice fabrication and electrical characterization at the level of single-electron tunneling.
Dr Daniel Moraru
Associate Professor
Research Institute of Electronics, Shizuoka University, Japan
Faculty of Science, Swinburne University of Technology
11:00am, 02/03/2023
At the Melbourne Centre for Nanofabrication Boardroom
151 Wellington Road, Clayton, 3168
Zoom link: here
Meeting ID: 812 9011 2054 & Passcode: 443815
